DocumentCode :
2193650
Title :
The investigation of galvanic corrosion in post-copper-CMP cleaning
Author :
Chen, H.C. ; Yang, M.S. ; Wu, J.Y. ; Wang, Victor
Author_Institution :
Adv. Technol. Dev. Dept., United Microelectron. Corp., Hsin-Chu, Taiwan
fYear :
2000
fDate :
2000
Firstpage :
256
Lastpage :
258
Abstract :
The characteristics of galvanic corrosion in post-copper CMP cleaning are investigated. This type of corrosion occurs when CMP process completed, due to the heating lamp in SRD step. Particularly, it occurs only in device wafer, but not in structural test wafer. The corrosion behavior with light was identified. It occurs not only in integrated cleaner, but also in stand alone brush type cleaner. Copper lines were bridged after corrosion. The corrosion by-product can be removed by means of solvent cleaning. The mechanism and the prevention of this type of light-induced corrosion are reported in this paper
Keywords :
chemical mechanical polishing; copper; corrosion; integrated circuit interconnections; surface cleaning; Cu; copper interconnect; integrated cleaner; light-induced galvanic corrosion; post-CMP cleaning; solvent cleaning; spin-rinse-dry processing; stand-alone brush cleaner; Chemicals; Cleaning; Copper; Corrosion; Galvanizing; Heating; Integrated circuit interconnections; Lamps; Slurries; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International
Conference_Location :
Burlingame, CA
Print_ISBN :
0-7803-6327-2
Type :
conf
DOI :
10.1109/IITC.2000.854341
Filename :
854341
Link To Document :
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