Title :
A new structural concept to suppress parasitic lateral carrier injection in insulated-gate thyristors
Author_Institution :
Int. Rectifier Corp., El Segundo, CA, USA
Abstract :
A new Insulated-Gate Thyristor structure with the N- base and P base regions of the thyristor coupled by a n-channel MOSFET is described. This configuration eliminates the parasitic lateral bipolar transistor present in previously reported MOS gated thyristor structures. This configuration leads to low on-state drop close to that of a 1-D thyristor and high controllable current density
Keywords :
MOS-controlled thyristors; current density; MOS gated thyristor; N- base; P base regions; controllable current density; insulated-gate thyristors; n-channel MOSFET coupling; on-state drop; parasitic lateral carrier injection; structural concept; Anodes; Bipolar transistors; Coupling circuits; Current density; Electrons; Equivalent circuits; Insulation; MOSFET circuits; Rectifiers; Thyristors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509499
