DocumentCode
2193697
Title
GaAs and InP-based monolithically integrated transmitters and photoreceivers
Author
Bhattacharya, P.
Author_Institution
Dept. of Electr. Eng., Michigan Univ., Ann Arbor, MI, USA
fYear
1994
fDate
23-27 May 1994
Firstpage
1491
Abstract
High-performance GaAs and InP-based components are required for the development long- and short-distance communication links. Our work in the development of monolithically integrated transmitters and photoreceivers is described, with reference to ongoing work elsewhere. Challenges in terms of materials incompatibility and device design and intrinsic and extrinsic limits of device and circuit performance are discussed.<>
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; laser beam applications; optical communication equipment; optical modulation; optical receivers; semiconductor lasers; transmitters; GaAs; GaAs-based components; InP; InP-based components; OEIC; circuit performance; device design; long-distance communication links; materials incompatibility; monolithically integrated photoreceivers; monolithically integrated transmitters; optical links; short-distance communication links; Circuit optimization; Gallium arsenide; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location
San Diego, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1778-5
Type
conf
DOI
10.1109/MWSYM.1994.335293
Filename
335293
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