Enhanced cryogenic on-wafer techniques for accurate In/sub x/Ga/sub 1-x/As HEMT device models

Author

Laskar, J. ; Lai, R. ; Bautista, J.J. ; Hamai, M. ; Nishimoto, M. ; Tan, K.L. ; Streit, D.C. ; Liu, P.H. ; Lo, D.C. ; Ng, G.I.

Author_Institution

Dept. of Electr. Eng., Hawaii Univ., Honolulu, HI, USA

fYear

1994

fDate

23-27 May 1994

Firstpage

1485

Abstract

An accurate on-wafer cryogenic measurement system is presented for empirical millimeter-wave device studies of In/sub x/Ga/sub 1-x/As HEMTs. Multi-line TRL calibrations are performed to provide traceable baseline results for cryogenic S-parameter measurements. This technique is then applied to develop wide frequency band small-signal models for HEMTs with In channel composition varied from 22% to 70%.<>

Keywords

III-V semiconductors; S-parameters; calibration; cryogenics; gallium arsenide; high electron mobility transistors; indium compounds; microwave measurement; semiconductor device models; semiconductor device testing; solid-state microwave devices; HEMT device models; In channel composition; In/sub x/Ga/sub 1-x/As HEMT; InGaAs; MM-wave measurement; S-parameter measurements; cryogenic measurement system; cryogenic onwafer techniques; millimeter-wave device studies; multiline TRL calibrations; wideband small-signal models; Calibration; Cryogenics; Frequency; HEMTs; MODFETs; Millimeter wave devices; Millimeter wave measurements; Performance evaluation; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335294

Filename

335294