The SIMEST: a new EST structure without parasitic thyristor achieved using SIMOX technology

Author

Sridhar, S. ; Baliga, R.J.

Author_Institution

Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA

fYear

1996

fDate

20-23 May 1996

Firstpage

283

Lastpage

286

Abstract

A new EST structure, in which the lateral N-channel MOSFET is isolated from the thyristor by using SIMOX technology to eliminate the parasitic thyristor, is presented. This structure exhibits high voltage current saturation beyond the breakdown voltage of the lateral N-channel MOSFET. It is shown with the aid of two-dimensional numerical simulations that the proposed SIMEST has a lower on-state voltage drop than the conventional EST and the IGBT, and an FBSOA comparable to that of an IGBT with identical design rules. Experimental results on the SIMEST fabricated with a 9 mask SIMOX Smart Power process are presented

Keywords

MOS-controlled thyristors; SIMOX; power semiconductor switches; semiconductor device models; EST structure; FBSOA; MOS gated thyristors; SIMEST; SIMOX technology; current saturation; emitter switched thyristor; lateral N-channel MOSFET; on-state voltage drop; power semiconductor switches; smart power process; two-dimensional numerical simulations; Anodes; Breakdown voltage; Cathodes; Insulated gate bipolar transistors; Isolation technology; MOSFET circuits; Medical simulation; Numerical simulation; Power MOSFET; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on

Conference_Location

Maui, HI

ISSN

1063-6854

Print_ISBN

0-7803-3106-0

Type

conf

DOI

10.1109/ISPSD.1996.509500

Filename

509500