Title :
A novel low-profile power module aimed at high-frequency applications
Author :
Shinohara, S. ; Suzuki, T. ; Tanino, K. ; Kobayashi, H. ; Hasegawa, Y.
Author_Institution :
Res. & Dev. Div., Origin Electr. Co. Ltd., Tokyo, Japan
Abstract :
A new 8 mm-profile power module for high-frequency applications is described. This module exhibits low inductances of less than 4 nH for the terminals and a low thermal resistance of 0.234°W/cm2, providing less assembly time by using a unique double-layered and terminal-integrated AlN substrate. Paralleled MOSFETs in this module demonstrate 500 V-50 A switching at 10 MHz
Keywords :
aluminium compounds; field effect transistor switches; modules; power MOSFET; power field effect transistors; power semiconductor switches; power supplies to apparatus; semiconductor device packaging; substrates; thermal resistance; 10 MHz; 50 A; 500 V; 8 mm; AlN; assembly time; double-layered AlN substrate; high-frequency applications; inductances; low thermal resistance; low-profile power module; paralleled MOSFET; switching; terminal-integrated AlN substrate; Assembly; Copper; Heat sinks; Inductance; MOSFET circuits; Multichip modules; Power MOSFET; Thermal conductivity; Thermal resistance; Wires;
Conference_Titel :
Power Semiconductor Devices and ICs, 1996. ISPSD '96 Proceedings., 8th International Symposium on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-3106-0
DOI :
10.1109/ISPSD.1996.509507
