Title :
Precision pulsed I-V system for accurate GaAs device I-V plane characterization
Author :
Pritchett, S. ; Stewart, R. ; Mason, J. ; Brehm, G. ; Christie, D.
Author_Institution :
Texas Instrum. Inc., USA
Abstract :
A precision on-wafer VXI-based pulsed I-V measurement system capable of rapid device characterization is presented. This system was developed for I-V plane characterization of GaAs FETs, HBTs, and diodes up to 100 volts. The pulsed I-V system is capable of pulsewidths under 200 nanoseconds with absolute current and voltage uncertainties less than 2.5 percent over greater than 110 dB of dynamic range. Measurement throughput is under 250 ms per I-V point. Accuracies are achieved by applying "DC voltage substitution" calibration to a novel pulser/sense instrument configuration.<>
Keywords :
III-V semiconductors; automatic test equipment; automatic testing; calibration; data acquisition; electric current measurement; field effect transistors; gallium arsenide; heterojunction bipolar transistors; semiconductor device testing; semiconductor diodes; voltage measurement; 100 V; 200 ns; DC voltage substitution calibration; FETs; GaAs device I-V plane characterization; HBTs; device characterization; diodes; onwafer VXI-based measurement system; pulsed I-V system; Calibration; Diodes; Dynamic range; FETs; Gallium arsenide; Instruments; Pulse measurements; Throughput; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335299
