DocumentCode
2193929
Title
Estimation and measurement of junction temperatures in a three-level voltage source converter
Author
Bruckner, Thomas ; Bernet, Steffen
Author_Institution
Inst. of Energy and Autom. Technol., Berlin Univ. of Technol., Germany
Volume
1
fYear
2005
fDate
2-6 Oct. 2005
Firstpage
106
Abstract
The design of a power converter must guarantee that the operating junction temperatures vj of all devices do not exceed their limits under all specified operating conditions. Usually, this is ensured by a simulative or analytical junction temperature estimation based on simple electrical and thermal models and semiconductor datasheet values. This paper discusses the difficulties and quantifies the limitations of this approach on the example of a three-level NPC VSC with IGBTs. The calculations are compared to the results of direct junction temperature measurements with an infrared camera. The paper also provides the experimental proof for the unequal loss and junction temperature distribution in the three-level NPC VSC.
Keywords
insulated gate bipolar transistors; power convertors; semiconductor junctions; temperature measurement; IGBT; infrared camera; insulated gate bipolar transistor; junction temperature estimation; power converter; semiconductor datasheet; thermal measurement; three-level voltage source converter; voltage source converter; Circuit testing; Converters; Electric variables measurement; Energy measurement; Insulated gate bipolar transistors; Power conversion; Power measurement; Temperature distribution; Temperature measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 2005. Fourtieth IAS Annual Meeting. Conference Record of the 2005
ISSN
0197-2618
Print_ISBN
0-7803-9208-6
Type
conf
DOI
10.1109/IAS.2005.1518299
Filename
1518299
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