Very low noise and low power operation of cryogenic AlInAs/GaInAs/InP HFET´s

Author

Pospieszalski, M.W. ; Nguyen, L.D. ; Lui, M. ; Liu, T. ; Thompson, M.A. ; Delaney, M.I.

Author_Institution

Nat. Radio Astron. Obs., Charlottesville, VA, USA

fYear

1994

fDate

23-27 May 1994

Firstpage

1345

Abstract

The cryogenic performance of 0.15 /spl mu/m gate length AlInAs/GaInAs/InP devices is reported. A noise temperature of less than 10 K (less than five times over quantum limit hf/k) is demonstrated at 40 GHz with a power consumption of less than 0.6 mW under optimal noise bias condition. With about 5 K penalty in noise performance at 40 GHz, the devices could be operated with as little as 60 /spl mu/W total power consumption. An interpretation of the measured noise performance with the help of a noise model, room temperature S-parameters and DC characteristics (measured at room and cryogenic temperatures) is offered.<>

Keywords

III-V semiconductors; S-parameters; aluminium compounds; cryogenics; field effect transistors; gallium arsenide; indium compounds; semiconductor device noise; solid-state microwave devices; 0.15 micron; 40 GHz; 60 muW to 0.6 mW; AlInAs-GaInAs-InP; DC characteristics; EHF; HFET; MM-wave FET; cryogenic performance; low noise operation; low power operation; noise model; optimal noise bias condition; power consumption; room temperature S-parameters; Cryogenics; Energy consumption; Hafnium; Indium phosphide; Noise measurement; Scattering parameters; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335301

Filename

335301