Title :
A 60-GHz LNA using commercially available PM HEMTs for intersatellite and mobile communications
Author :
Lunden, O.-P. ; Sipila, M. ; Jenu, M.
Author_Institution :
Tech. Res. Centre of Finland, Espoo, Finland
Abstract :
A 60-GHz low noise amplifier using commercially available 0.25-/spl mu/m pseudomorphic HEMTs has been developed. The four-stage amplifier has a noise figure of 4.8 dB and a gain of 15.1 dB at 60.2 GHz.<>
Keywords :
high electron mobility transistors; hybrid integrated circuits; microwave amplifiers; microwave integrated circuits; microwave links; mobile radio systems; satellite relay systems; semiconductor device noise; 0.25 micron; 15.1 dB; 4.8 dB; 60 to 60.2 GHz; EHF; LNA; MM-wave IC; commercially available PM HEMTs; four-stage amplifier; intersatellite communications; low noise amplifier; mobile communications; pseudomorphic HEMTs; Gain; HEMTs; Low-noise amplifiers; MODFETs; Noise figure; PHEMTs;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335302
