Title :
Design of W-band monolithic low noise amplifiers using accurate HEMT modeling
Author :
Kashiwa, T. ; Tanino, N. ; Minami, H. ; Katoh, T. ; Yoshida, N. ; Itoh, Y. ; Mitsui, Y. ; Imatani, T. ; Mitsui, S.
Author_Institution :
Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A W-band monolithic two-stage low noise amplifiers have been developed using new accurate HEMT modeling. The modeling includes intrinsic FET noise parameters that are independent of frequency. A noise figure of 5.5 dB with an associated gain of 8.7 dB is achieved at 91 GHz when biased for low noise figure, and a small signal gain of 10.4 dB with noise figure of 5.9 dB is obtained when biased for high gain. Good agreement between measured and simulated data of the low noise amplifier verifies the HEMT modeling.<>
Keywords :
MMIC; equivalent circuits; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; semiconductor device models; semiconductor device noise; 5.5 to 5.9 dB; 8.7 to 10.4 dB; 91 GHz; EHF; HEMT modeling; MIMIC; MM-wave IC; W-band; intrinsic FET noise parameters; low noise amplifiers; monolithic LNA; two-stage amplifier; FETs; Frequency; Gain; HEMTs; Low-noise amplifiers; Noise figure; Noise measurement;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335314
