Title :
Highly reliable InAlAs/InGaAs heterojunction FETs fabricated using completely molybdenum-based electrode technology (COMET)
Author :
Onda, K. ; Fujihara, A. ; Mizuki, E. ; Hori, Y. ; Miyamoto, H. ; Samoto, N. ; Kuzuhara, M.
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
Abstract :
This paper describes high performance and high reliability InAlAs/InGaAs heterojunction FETs fabricated using completely molybdenum-based electrode technology "COMET", in which a Mo/Ti/Pt/Au Schottky gate and Mo/Ti/Pt/Au non-alloyed ohmic electrodes are successfully employed. The superior reliability of the COMET-FETs is attributed to the reduction of the interdiffusion between metals (gate or ohmic) and semiconductors (InAlAs or InGaAs) by Mo insertion.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; indium compounds; molybdenum; ohmic contacts; reliability; solid-state microwave devices; COMET; InAlAs-InGaAs-Mo-Ti-Pt-Au; Mo-Ti-Pt-Au-InAlAs-InGaAs; Schottky gate; completely molybdenum-based electrode technology; heterojunction FETs; nonalloyed ohmic electrodes; reliability; Electrodes; FETs; Gold; Heterojunctions; Indium compounds; Indium gallium arsenide; Semiconductor device reliability;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335322
