1200 V super low loss IGBT module with low noise characteristics and high dl/dt controllability

This paper presents the superior characteristics of newly developed low loss and low noise 1200 V IGBT module for the first time. In order to realize low noise emission, it is necessary not only to improve the reverse recovery characteristics of FWD but also to reduce the low current turn-on dl/dt of IGBT. New IGBT chip with high turn-on dl/dt controllability and low turn-on power dissipation has been successfully developed by the reduction of the Miller capacitance by the optimization of the surface structure. A 1200 V-450 A IGBT module which is installed the new IGBT and an optimized FWD chips has been able to realize 30% reduction of the switching power dissipation compared with the conventional IGBT module under the conditions to have the same noise emission characteristics.