Ka-band monolithic VCOs for low noise applications using GaInP/GaAs HBTs

Author

Guttich, U. ; Dieudonne, J.M. ; Riepe, K. ; Marten, A. ; Leier, H.

Author_Institution

Deutsche Aerosp. AG, Ulm, Germany

fYear

1994

fDate

23-27 May 1994

Firstpage

131

Abstract

Design, fabrication and evaluation of Ka-band monolithic voltage controlled oscillators using GaInP/GaAs Heterojunction Bipolar Transistors (HBTs) as the active device are described. The employed HBTs have an emitter area of 2/spl times/1,5 /spl mu/m/spl times/10 /spl mu/m and a self-aligned base. The varactor diode is formed from the base-collector junction of the HBT structure. The oscillators are realized in a common emitter configuration and show tuning ranges of about 1 GHz at center frequencies of 35 GHz, 37 GHz and 40 GHz. Best measured phase noise at 1 MHz off carrier is -107 dBc/Hz.<>

Keywords

III-V semiconductors; MMIC; bipolar integrated circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave oscillators; tuning; varactors; variable-frequency oscillators; 35 to 40 GHz; GaInP-GaAs; GaInP/GaAs; HBTs; IC design; IC fabrication; Ka-band; common emitter configuration; emitter area; low noise applications; monolithic VCOs; phase noise; self-aligned base; tuning ranges; varactor diode; Diodes; Fabrication; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Noise measurement; Phase measurement; Tuning; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335348

Filename

335348