DocumentCode
2195092
Title
Domains Inversion in LiNbO3 Using Electron Beam Irradiation for Phononic Crystals
Author
Assouar, M.B. ; Vincent, B. ; Moubchir, H. ; Elmazria, O. ; Khelif, A. ; Laude, V.
Author_Institution
Nancy-Univ., Vandoeuvre-les-Nancy
fYear
2006
fDate
July 30 2006-Aug. 3 2006
Firstpage
111
Lastpage
113
Abstract
We report here, the study of domain inversion in lithium niobate (z-cut) by electron beam irradiation without any static bias associated to wet etching, in view of the fabrication of phononic crystals. The inverted domains are revealed by HF-etching taking advantage of the large difference in etching rate between z+ and z-faces. A pertinent choice of irradiation conditions such as accelerating voltage, probe current and injected dose, (parameters of interest for the geometry and size of the obtained domains), was determined and optimized. Two dimensional structures at the micrometer scale were then realized on z-cut LiNbO3. We demonstrate the achievement of 8 mum diameter hexagons, with a very large depth close to 30 mum, which depends on the etching time. The obtained structures were characterized before etching by optical microscopy to visualize the inverted domains, and after etching by field emission scanning electron microscopy. These characterisations pointed out the high occupancy rate of obtained structures. Numerical simulations of the realized phononic structure band gap show a frequency band gap around 200 MHz.
Keywords
electron beam effects; energy gap; etching; lithium compounds; phononic crystals; LiNbO3; domain inversion; electron beam irradiation; etching rate; field emission scanning electron microscopy; optical microscopy; phononic crystals; phononic structure band gap; wet etching; Acceleration; Crystals; Electron beams; Fabrication; Lithium niobate; Optical microscopy; Photonic band gap; Scanning electron microscopy; Voltage; Wet etching; Domain inversion; LiNbO3 ; e-beam exposure; phononic crystals;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of ferroelectrics, 2006. isaf '06. 15th ieee international symposium on the
Conference_Location
Sunset Beach, NC
ISSN
1099-4734
Print_ISBN
978-1-4244-1331-7
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2006.4387846
Filename
4387846
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