Title :
First demonstration of a GaInP/GaAs HBT microwave oscillator
Author :
Prasad, S.J. ; Haynes, C.
Author_Institution :
Electron. Res. Labs., Tektronix, Beaverton, OR, USA
Abstract :
A GaInP/GaAs HBT YIG oscillator tunable from 6 to 9 GHz is presented. The HBT used in this circuit has an f/sub T/ and f/sub max/ of 42 and 33 GHz respectively. At 7.8 GHz, the phase noise of the oscillator was -85 dBc/Hz when offset from the carrier by 10 kHz. The phase noise of the present oscillator compares well with the phase noise results of other AlGaAs/GaAs HBT oscillators.<>
Keywords :
III-V semiconductors; bipolar transistor circuits; gallium arsenide; garnets; indium compounds; microwave oscillators; solid-state microwave circuits; yttrium compounds; 10 kHz; 33 GHz; 42 GHz; 6 to 9 GHz; 7.8 GHz; GaInP-GaAs; HBT YIG oscillator; HBT microwave oscillator; phase noise; tunable; Gallium arsenide; Heterojunction bipolar transistors; Microwave oscillators; Phase noise; Tunable circuits and devices;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335355
