Title :
A low phase noise monolithic VCO in SiGe BiCMOS
Author :
Mourant, J.-M. ; Imbornone, J. ; Tewksbury, T.
Author_Institution :
IBM Corp., Lowell, MA, USA
Abstract :
A fully integrated, low phase noise, dual-band voltage controlled oscillator (VCO) utilizing a novel tuning scheme is reported. Coarse digital tuning is achieved using MOSFETs and fine analog tuning utilizes PN varactors. The measured phase noise is -95 dBc/Hz max at 3 GHz+25 kHz over the whole tuning bandwidth (/spl plusmn/12.5%), and the power dissipated is 22.5 mW. To our knowledge, these are the best results published so far.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC oscillators; UHF integrated circuits; UHF oscillators; circuit tuning; integrated circuit noise; phase noise; semiconductor materials; varactors; voltage-controlled oscillators; 22.5 mW; 3 GHz; MOSFET-based coarse digital tuning; PN varactors; SiGe; SiGe BiCMOS; dual-band VCO; low phase noise VCO; monolithic VCO; tuning scheme; varactor-based fine analog tuning; voltage controlled oscillator; BiCMOS integrated circuits; Dual band; Germanium silicon alloys; MOSFETs; Phase noise; Power measurement; Silicon germanium; Tuning; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-6280-2
DOI :
10.1109/RFIC.2000.854418
