Sol-gel derived lead-free piezoelectric Bi1/2Na1/2TiO3 thin film for MEMS applications

Author

Yu, Ting ; Kwok, Kin-Wing ; Chan, Helen

Author_Institution

Hong Kong Polytech Univ., Kowloon

fYear

2006

fDate

July 30 2006-Aug. 3 2006

Firstpage

186

Lastpage

188

Abstract

Bi_1/2Na_1/2TiO₃ (abreviated as BNT) is considered as a promising lead-free piezoelectric material for sensor and actuator applications. In this study, we demonstrate an improved sol-gel process using rapid thermal annealing (RTA). Our results indicate that thermal annealing in an oxygen atmosphere after each layer of coating is effective in promoting crystallization of the BNT film at a low temperature of 650degC. The resulting film is dense and well crystallized in the perovskite phase. The piezoelectric properties of the sol-gel derived BNT films are characterized with the help of a laser interferometer. The BNT based film is expected to be a new and promising candidate for lead-free piezoelectric MEMS applications.

Keywords

bismuth compounds; light interferometers; micromechanical devices; piezoelectric thin films; rapid thermal annealing; sodium compounds; sol-gel processing; BiNaTiO₃; MEMS; actuator applications; laser interferometer; oxygen atmosphere; perovskite phase; rapid thermal annealing; sensor applications; sol-gel derived lead-free piezoelectric thin film; Atmosphere; Bismuth; Coatings; Crystallization; Environmentally friendly manufacturing techniques; Piezoelectric actuators; Piezoelectric films; Piezoelectric materials; Rapid thermal annealing; Rapid thermal processing; MEMS; lead-free; piezoelectric; sol-gel; thin film;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of ferroelectrics, 2006. isaf '06. 15th ieee international symposium on the

Conference_Location

Sunset Beach, NC

ISSN

1099-4734

Print_ISBN

978-1-4244-1331-7

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2006.4387856

Filename

4387856