5 mW GaAs HBT low power consumption X-band amplifier

Author

Kobayashi, K.W. ; Oki, A.K. ; Tran, L.T. ; Umemoto, D.K. ; Streit, D.C.

Author_Institution

Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA

fYear

1994

fDate

23-27 May 1994

Firstpage

17

Abstract

We report on a 5 mW GaAs HBT low power consumption X-band amplifier which benchmarks the highest gain to dc power quotient figure of merit reported for HBT technology. This amplifier utilizes the inherently high maximum available/stable gain of out 2-/spl mu/m self-aligned base ohmic metal GaAs HBTs. The X-band amplifier design consists of 4-sections and can achieve 13.1 dB gain at 12 GHz with less than 5 mW of power consumption. The amplifier is resistively self-biased with 2.1 Volts, and each 2/spl times/10 /spl mu/m/sup 2/ single-emitter HBT draws 0.5 mA with a Vce bias of 2 volts. The corresponding 1-dB compression is -21.5 dBm. By increasing the total bias current to 50 mA, the amplifier achieves a gain of 39 dB, an IP3 of 13.5 dBm, and a P-1dB of 5.5 dBm while consuming a total of 235 mW.<>

Keywords

III-V semiconductors; MMIC; bipolar integrated circuits; gallium arsenide; microwave amplifiers; microwave integrated circuits; 0.5 mA; 12 GHz; 13.1 dB; 2 V; 2 mum; 2.1 V; 235 mW; 39 dB; 5 mW; 50 mA; GaAs; HBT low power consumption X-band amplifier; HBT technology; X-band amplifier design; base ohmic metal; dc power quotient figure of merit; highest gain; inherently high maximum available stable gain; power consumption; resistively self-biased; self-aligned; single-emitter HBT; total bias current; Energy consumption; Gain; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335371

Filename

335371