DocumentCode
2195495
Title
A 3.2 V, 45% efficient, novel Class AB+C CDMA MMIC power amplifier using quasi enhancement mode PHEMTs
Author
Cao, J. ; Wang, X.W. ; Quek, C.K. ; Singh, R. ; Nakamura, H.
Author_Institution
Inst. of Microelectron., Singapore
fYear
2000
fDate
10-13 June 2000
Firstpage
93
Lastpage
96
Abstract
This paper presents a novel power amplifier (PA) configuration (Class AB+C) which allows low quiescent current and thereby high PAE at low output power levels to be achieved without compromising high power linearity. The designed 800 MHz CDMA PA using quasi enhancement PHEMT process attained over 45% PAE, 0.8-watt output power and 33 dB gain at -43 dBc adjacent channel power rejection (ACPR), at a supply voltage of 3.2 V. The total quiescent current consumed is only 52 mA. In contrast, the conventional Class AB configuration required 82 mA to achieve similar performance.
Keywords
HEMT integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; adjacent channel interference; code division multiple access; 0.8 W; 3.2 V; 33 dB; 45 percent; 52 mA; 800 MHz; Class AB+C power amplifier; MMIC power amplifier; PAE; adjacent channel power rejection; high power linearity; output power levels; quasi enhancement PHEMT process; quasi enhancement mode PHEMTs; quiescent current; total quiescent current; FETs; High power amplifiers; Linearity; MMICs; Multiaccess communication; PHEMTs; Power amplifiers; Power generation; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location
Boston, MA, USA
ISSN
1529-2517
Print_ISBN
0-7803-6280-2
Type
conf
DOI
10.1109/RFIC.2000.854424
Filename
854424
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