Title :
A single supply very high power and efficiency integrated PHEMT amplifier for GSM applications
Author :
Huin, F. ; Duvanaud, C. ; Serru, V. ; Robin, F. ; Leclerc, E.
Author_Institution :
ACCO SA, Saint-Germain-en-Laye, France
Abstract :
The power PHEMT technology presented allows one to achieve high power (35.5 dBm) and PAE (60%) for a low drain bias of 3.5 volts and a gate bias of zero volts. For such operating conditions, analyses are conducted to adjust the load termination at the signal harmonics.
Keywords :
HEMT integrated circuits; MMIC amplifiers; cellular radio; harmonics; transceivers; 3.5 V; 60 percent; GSM applications; PAE; drain bias; gate bias; integrated PHEMT amplifier; load termination; operating conditions; signal harmonics; Frequency; GSM; High power amplifiers; Indium gallium arsenide; Low voltage; Molecular beam epitaxial growth; PHEMTs; Power amplifiers; Power supplies; Threshold voltage;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-6280-2
DOI :
10.1109/RFIC.2000.854426
