Title :
Monolithic Ka-band FET receiver chips
Author :
Reeves, R. ; Brady, V.
Author_Institution :
Gamma Monolithics, USA
Abstract :
Integrated SSB low noise receivers have been developed using 0.25 um PHEMT mushroom gate process. The chip includes low noise amplifiers, miniature image noise filter, and FET downconverters to achieve less than a 4 dB SSB NF. These circuits can be used in SSB communication systems or in monopulse radar receiver applications where they will reduce channel to channel tracking errors, test, and assembly costs compared to a three chip assembly of LNA, filter, and downconverter.<>
Keywords :
MMIC; active filters; field effect integrated circuits; frequency convertors; microwave amplifiers; microwave filters; radar receivers; 0.25 micron; FET receiver chips; Ka-band; PHEMT mushroom gate process; SSB communication systems; SSB low noise receivers; assembly costs; channel to channel tracking errors; downconverters; image noise filter; low noise amplifiers; monopulse radar receiver; test costs; Amplitude modulation; Assembly systems; Circuit testing; FETs; Filters; Low-noise amplifiers; Noise measurement; Noise reduction; PHEMTs; Radar tracking;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335402
