Title :
SHOrt Voltage Elevation (SHOVE) test
Author :
Chang, Jonathan T -Y ; McCluskey, Edward J.
Author_Institution :
Center for Reliable Comput., Stanford Univ., CA, USA
Abstract :
A stress procedure for reliability screening, SHOrt Voltage Elevation (SHOVE) test, is analyzed here. During SHOVE, test vectors are run at higher-than-normal supply voltage for a short period. The IDDQ values of circuits-under-test are then measured at the normal voltage. This procedure is effective in screening oxide thinning, which occurs when the oxide thickness of a transistor is less than expected. Oxide thinning can cause early-life failures. The stress voltage of SHOVE testing should be set such that the electrical field across an oxide is approximately 6 MV/cm. The stress time can be calculated by using "effective oxide thinning" model. We will also discuss the requirement of an input vector for stressing a complementary CMOS logic gate efficiently.
Keywords :
CMOS logic circuits; integrated circuit reliability; integrated circuit testing; logic testing; IDDQ testing; SHOVE; circuit-under-test; complementary CMOS logic gate; failure; oxide thinning; reliability screening; short voltage elevation test; stress voltage; CMOS logic circuits; Circuit testing; Costs; Current measurement; Leakage current; Pollution measurement; Semiconductor device modeling; Stress; Tunneling; Voltage;
Conference_Titel :
IDDQ Testing, 1996., IEEE International Workshop on
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-8186-7655-8
DOI :
10.1109/IDDQ.1996.557811
