SHOrt Voltage Elevation (SHOVE) test

Author

Chang, Jonathan T -Y ; McCluskey, Edward J.

Author_Institution

Center for Reliable Comput., Stanford Univ., CA, USA

fYear

1996

fDate

24-25 Oct. 1996

Firstpage

45

Lastpage

49

Abstract

A stress procedure for reliability screening, SHOrt Voltage Elevation (SHOVE) test, is analyzed here. During SHOVE, test vectors are run at higher-than-normal supply voltage for a short period. The IDDQ values of circuits-under-test are then measured at the normal voltage. This procedure is effective in screening oxide thinning, which occurs when the oxide thickness of a transistor is less than expected. Oxide thinning can cause early-life failures. The stress voltage of SHOVE testing should be set such that the electrical field across an oxide is approximately 6 MV/cm. The stress time can be calculated by using "effective oxide thinning" model. We will also discuss the requirement of an input vector for stressing a complementary CMOS logic gate efficiently.

Keywords

CMOS logic circuits; integrated circuit reliability; integrated circuit testing; logic testing; IDDQ testing; SHOVE; circuit-under-test; complementary CMOS logic gate; failure; oxide thinning; reliability screening; short voltage elevation test; stress voltage; CMOS logic circuits; Circuit testing; Costs; Current measurement; Leakage current; Pollution measurement; Semiconductor device modeling; Stress; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

IDDQ Testing, 1996., IEEE International Workshop on

Conference_Location

Washington, DC, USA

Print_ISBN

0-8186-7655-8

Type

conf

DOI

10.1109/IDDQ.1996.557811

Filename

557811