Title :
Microwave characterization of sub-micron n- and p-channel MOSFETs fabricated with thin film Silicon-on-Sapphire
Author :
Chang, C.E. ; Asbeck, P.M. ; De La Houssaye, P.R. ; Imthurn, G. ; Garcia, G.A. ; Lagnado, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
Microwave characteristics are reported for n- and p- MOS transistors fabricated with thin-film Silicon-on-Sapphire technology. The gates were defined with I-line optical lithography, and ranged down to 0.5 /spl mu/m (drawn dimension). The f/sub t/ values of the transistors reach 22 GHz for the n-channel structures and 21 GHz for the p-channel devices. The PMOS results are significantly higher than found with other Si or III-V technologies, and can potentially lead to high performance complementary microwave circuits. Small signal transistor models are similar to the ones for GaAs FETs. Dependence of model parameters on gate length were determined.<>
Keywords :
characteristics measurement; insulated gate field effect transistors; photolithography; semiconductor device models; semiconductor technology; solid-state microwave devices; 0.5 micron; 21 to 22 GHz; I-line optical lithography; complementary microwave circuits; gate length; microwave characterization; n-channel MOSFETs; n-channel structures; p-channel MOSFETs; p-channel devices; small signal transistor models; thin film silicon-on-sapphire; III-V semiconductor materials; Lithography; MOSFETs; Microwave FETs; Microwave circuits; Microwave devices; Microwave technology; Microwave transistors; Semiconductor thin films; Thin film transistors;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335418
