DocumentCode
2195905
Title
Predicted small-signal gain of the HBT distributed amplifier
Author
Botterill, I.A. ; Aitchison, C.S.
Author_Institution
Dept. of Electr. Eng. & Electron., Brunel Univ., Uxbridge, UK
fYear
1994
fDate
23-27 May 1994
Firstpage
421
Abstract
Recent interest in the heterojunction bipolar transistor (HBT) distributed amplifier (DA) has led to a need for an analytical expression predicting its small-signal gain. It has been found that standard equations based on the MESFET DA are inaccurate when applied to the HBT DA. This paper describes an expression which has been developed to give better agreement with simulated results.<>
Keywords
MMIC; bipolar integrated circuits; equivalent circuits; heterojunction bipolar transistors; microwave amplifiers; network analysis; semiconductor device models; wideband amplifiers; HBT distributed amplifier; broadband amplifier; heterojunction bipolar transistor; small-signal gain; Distributed amplifiers; Equations; Heterojunction bipolar transistors; MESFETs; Standards development;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location
San Diego, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1778-5
Type
conf
DOI
10.1109/MWSYM.1994.335422
Filename
335422
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