Title :
Predicted small-signal gain of the HBT distributed amplifier
Author :
Botterill, I.A. ; Aitchison, C.S.
Author_Institution :
Dept. of Electr. Eng. & Electron., Brunel Univ., Uxbridge, UK
Abstract :
Recent interest in the heterojunction bipolar transistor (HBT) distributed amplifier (DA) has led to a need for an analytical expression predicting its small-signal gain. It has been found that standard equations based on the MESFET DA are inaccurate when applied to the HBT DA. This paper describes an expression which has been developed to give better agreement with simulated results.<>
Keywords :
MMIC; bipolar integrated circuits; equivalent circuits; heterojunction bipolar transistors; microwave amplifiers; network analysis; semiconductor device models; wideband amplifiers; HBT distributed amplifier; broadband amplifier; heterojunction bipolar transistor; small-signal gain; Distributed amplifiers; Equations; Heterojunction bipolar transistors; MESFETs; Standards development;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335422
