Fullband Study of Ultra-Scaled Electron and Hole SiGe Nanowire FETs

Author

Paul, Abhijeet ; Mehrotra, Saumitra ; Luisier, Mathieu ; Klimeck, Gerhard

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

2010

fDate

16-16 April 2010

Firstpage

1

Lastpage

4

Abstract

Ultra-scaled SiGe nanowire FETs (NWFETs) are an attractive candidate in achieving faster p-type devices compared to Silicon. This work investigates the performance of SiGe nanowire FETs (NWFETs) using a Virtual Crystal Approximation (VCA) method based on an atomistic Tight-Binding (TB) model. The electronic structure calculation is self- consistently coupled to a 2D Poisson solver. The spatial charge and current distribution in these NWFETs strongly depend on the Ge% as well as on the channel orientation. We predict an improvement in both SiGe n and p FETs in terms of I ON and gate delay (Â¿_D)compared to Silicon. For Ge > 80% the <110> oriented channels show better performance compared to the <100> SiGe n and p-FETs .

Keywords

Ge-Si alloys; Poisson equation; approximation theory; field effect transistors; nanowires; semiconductor materials; 2D Poisson solver; SiGe; atomistic tight-binding model; electronic structure calculation; ultra-scaled electron; ultra-scaled nanowire FET; virtual crystal approximation method; Capacitance; Charge carrier processes; Computer networks; Current distribution; Electrostatics; FETs; Germanium silicon alloys; MOSFETs; Nanoscale devices; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electron Devices (WMED), 2010 IEEE Workshop on

Conference_Location

Boise, ID

ISSN

1947-3842

Print_ISBN

978-1-4244-6572-9

Type

conf

DOI

10.1109/WMED.2010.5453756

Filename

5453756