DocumentCode :
2196002
Title :
Nanodomain Manipulation for Ferroelectric Data Storage with High Recording Density, Fast Domain Switching and Low Bit Error Rate
Author :
Hiranaga, Yoshiomi ; Hashimoto, Sunao ; Odagawa, Nozomi ; Tanaka, Kenkou ; Cho, Yasuo
Author_Institution :
Tohoku Univ., Sendai
fYear :
2006
fDate :
July 30 2006-Aug. 3 2006
Firstpage :
277
Lastpage :
280
Abstract :
Recording density, domain switching time and bit error rate were evaluated using a data storage system based on scanning nonlinear dielectric microscopy. Congruent lithium tantalate single crystals with the thickness less than 50 nm were used as recording media. Local domain switching was carried out by applying voltage pulse on the recording media using a conductive cantilever. Close-packed domain dot arrays were written on the recording media. As a result of optimizing the writing pulse conditions, the dot array with the areal recording density of 10.1 Tbit/inch2 was successfully written. Subsequently, the thickness of recording media was reduced in order to improve the domain switching property, which determines the upper limit of data transfer rate. A nanodomain dot was formed by applying a 500-ps pulse on the 18-nm-thick recording medium. Actual information data were recorded for bit error tests. There were no bit errors in approximately ten-thousand-bit data under the areal recording density of 258 Gbit/inch2. It means bit error rate was less than 1x10-4. Additionally it was also confirmed that actual information data was recorded at the areal recording density of 0.98 Tbit/inch2 with a few bit errors.
Keywords :
data recording; electric domains; error statistics; ferroelectric materials; ferroelectric storage; ferroelectric switching; lithium compounds; nanostructured materials; scanning probe microscopy; LiTaO3; applied voltage pulse; areal recording density; bit error rate; close-packed domain dot arrays; conductive cantilever; congruent lithium tantalate single crystals; data transfer rate; domain switching time; ferroelectric data storage; nanodomain dot; nanodomain manipulation; recording media thickness; scanning nonlinear dielectric microscopy; size 18 nm; time 500 ps; writing pulse condition; Bit error rate; Crystals; Data storage systems; Dielectrics; Ferroelectric materials; Lithium compounds; Memory; Microscopy; Voltage; Writing; domain switching; lithium tantalate; probe memory; scanning nonlinear dielectric microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of ferroelectrics, 2006. isaf '06. 15th ieee international symposium on the
Conference_Location :
Sunset Beach, NC
ISSN :
1099-4734
Print_ISBN :
978-1-4244-1331-7
Electronic_ISBN :
1099-4734
Type :
conf
DOI :
10.1109/ISAF.2006.4387885
Filename :
4387885
Link To Document :
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