Characteristics and modeling of passive MESFETs for non-linear control applications

Author

Katz, A. ; Dorval, R.

Author_Institution

Trenton State Coll., USA

fYear

1994

fDate

23-27 May 1994

Firstpage

437

Abstract

GaAs MESFETs, operated as passive elements, have proven valuable as linearizers and limiters, as well as switches and attenuators. This work provides new information on the non-linear characteristics of these devices, and presents a two-dimensional lumped element model which accurately predicts device non-linearity over a wide range of power (-35 to >10 dBm) and frequency (.1 to >18 GHz). The application of this model to the design of a TWTA linearizer is demonstrated. The model allows linearized TWTA transfer characteristics and C/I performance to be predicted using standard CAD software.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; linearisation techniques; semiconductor device models; solid-state microwave devices; 0.1 to 18 GHz; C/I performance; GaAs; GaAs MESFETs; TWTA linearizer; device nonlinearity; linearized transfer characteristics; nonlinear characteristics; nonlinear control applications; passive MESFETs; two-dimensional lumped element model; Application software; Attenuators; Design automation; Frequency; Gallium arsenide; MESFETs; Predictive models; Software performance; Software standards; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335426

Filename

335426