Title :
Characteristics and modeling of passive MESFETs for non-linear control applications
Author :
Katz, A. ; Dorval, R.
Author_Institution :
Trenton State Coll., USA
Abstract :
GaAs MESFETs, operated as passive elements, have proven valuable as linearizers and limiters, as well as switches and attenuators. This work provides new information on the non-linear characteristics of these devices, and presents a two-dimensional lumped element model which accurately predicts device non-linearity over a wide range of power (-35 to >10 dBm) and frequency (.1 to >18 GHz). The application of this model to the design of a TWTA linearizer is demonstrated. The model allows linearized TWTA transfer characteristics and C/I performance to be predicted using standard CAD software.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; linearisation techniques; semiconductor device models; solid-state microwave devices; 0.1 to 18 GHz; C/I performance; GaAs; GaAs MESFETs; TWTA linearizer; device nonlinearity; linearized transfer characteristics; nonlinear characteristics; nonlinear control applications; passive MESFETs; two-dimensional lumped element model; Application software; Attenuators; Design automation; Frequency; Gallium arsenide; MESFETs; Predictive models; Software performance; Software standards; Switches;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335426
