Monolithic GaAs-InGaP HBT balanced vector modulators for millimeter-wave wireless systems

Author

Ashtiani, A.E. ; Gokdemir, T. ; Vilches, A. ; Hu, Z. ; Robertson, I.D. ; Marsh, S.P.

Author_Institution

Dept. of Electron. Eng., King´s Coll., London, UK

fYear

2000

fDate

10-13 June 2000

Firstpage

187

Lastpage

190

Abstract

This paper describes the design and performance of millimeter-wave balanced vector modulators employing the Marconi HBT MMIC technology. Two versions have been fabricated for operation at 38 GHz; the first employs normal Lange couplers whilst the second employs miniaturised microstrip couplers, which reduce the MMIC chip area by more than 40%. With a simple bias calibration technique the circuits achieve near-perfect constellations with negligible amplitude and phase errors over a wide bandwidth.

Keywords

III-V semiconductors; bipolar MIMIC; gallium arsenide; heterojunction bipolar transistors; indium compounds; microstrip couplers; millimetre wave couplers; mobile radio; modulators; radio transmitters; 38 GHz; GaAs-InGaP; HBT balanced vector modulators; III-V semiconductors; MMIC chip area; Marconi HBT MMIC technology; amplitude errors; bias calibration technique; millimeter-wave modulators; millimeter-wave wireless systems; miniaturised microstrip couplers; near-perfect constellations; normal Lange couplers; phase errors; Amplitude modulation; Couplers; FETs; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Millimeter wave radar; Millimeter wave technology; Phase modulation; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE

Conference_Location

Boston, MA, USA

ISSN

1529-2517

Print_ISBN

0-7803-6280-2

Type

conf

DOI

10.1109/RFIC.2000.854445

Filename

854445