Title :
Nanostructuring and thermoelectric properties of semiconductor tellurides
Author :
Zhu, T.J. ; Cao, Y.Q. ; Yan, F. ; Zhao, X.B.
Author_Institution :
Dept. of Mater. Sci. & Eng., Zhejiang Univ., Hangzhou
Abstract :
Bulk nanostructured (Bi,Sb)2Te3 compounds and GeTe based amorphous/nanocrystal composites have been successfully fabricated by the combined hydrothermal/hot-pressing and quenching/annealing methods, respectively. The (Bi,Sb)2Te3 nanopowders synthesized by hydrothermal method exhibit a hollow-like structure. After hot-pressing, the nanoscale grains varying from tens to hundreds of nanometers were found in the bulk sample. The maximum ZT value of this (Bi,Sb)2Te3 sample is higher than the zone-melt one at room temperature. The sizes of the nanocrystals in the bulk GeTe nanocomposites were below 10 nm, the presence of which contributed to the remarkable improvement of the electrical conductivity and thermoelectric power factor compared to the amorphous precursors.
Keywords :
annealing; antimony compounds; bismuth compounds; electrical conductivity; germanium compounds; hot pressing; nanocomposites; nanoparticles; nanotechnology; quenching (thermal); semiconductor growth; semiconductor materials; thermoelectric power; (BiSb)2Te3; GeTe; amorphous composites; annealing; electrical conductivity; hollow-like structure; hot pressing; nanocrystal composites; nanopowders; nanostructured compounds; quenching; room temperature; thermoelectric power factor; Amorphous materials; Annealing; Conductivity; Nanocomposites; Nanocrystals; Nanoparticles; Reactive power; Tellurium; Temperature; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2007. ICT 2007. 26th International Conference on
Conference_Location :
Jeju Island
Print_ISBN :
978-1-4244-2262-3
Electronic_ISBN :
1094-2734
DOI :
10.1109/ICT.2007.4569410
