• DocumentCode
    2196057
  • Title

    A novel HBT distributed amplifier design topology based on attenuation compensation techniques

  • Author

    Kobayashi, K.W. ; Esfandiari, R. ; Oki, A.K.

  • Author_Institution
    Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
  • fYear
    1994
  • fDate
    23-27 May 1994
  • Firstpage
    447
  • Abstract
    We report on a novel HBT distributed amplifier (DA) design which achieves the highest gain-bandwidth product (GBP) per device f/sub T/ so far reported for HBT distributed amplifiers. This paper introduces a new design topology for HBT DA´s which incorporates attenuation compensation on both the input and output transmission lines. A four-section HBT DA using this novel topology achieves a gain of 15 dB and a 3-dB bandwidth of >15 GHz. The resulting gain-bandwidth product is 84 GHz. When normalized to the device f/sub T/, this DA achieves the highest normalized gain-bandwidth-product figure of merit for HBT DA´s, /spl ap/3.67, which is a 55% improvement over existing state-of-the-art performance. The new device configuration offers 15-20 do more available gain for the device unit cell and results in gain-bandwidth product improvements of 200% over a conventional common-emitter DA configuration.<>
  • Keywords
    MMIC; bipolar integrated circuits; compensation; equivalent circuits; heterojunction bipolar transistors; microwave amplifiers; network synthesis; network topology; wideband amplifiers; 15 GHz; 15 dB; HBT distributed amplifier; MMIC; amplifier design topology; attenuation compensation techniques; gain-bandwidth product; Attenuation; Bandwidth; Distributed amplifiers; Gain; Heterojunction bipolar transistors; Topology; Transmission lines;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1994., IEEE MTT-S International
  • Conference_Location
    San Diego, CA, USA
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-1778-5
  • Type

    conf

  • DOI
    10.1109/MWSYM.1994.335429
  • Filename
    335429