35 GHz pulsed HBT MMIC amplifiers

Author

Wohlert, R.M. ; Jackson, G. ; Adlerstein, M.G.

Author_Institution

Res. Div., Raytheon Co., Lexington, MA, USA

fYear

1994

fDate

23-27 May 1994

Firstpage

455

Abstract

A three-stage MMIC preamplifier and a two-stage power amplifier using GaAs-AlGaAs heterojunction bipolar transistors (HBTs) have been developed for pulsed-power applications at 35 GHz. Both amplifiers have been fully characterized at 35 GHz with RF input power and base bias pulse wave forms having 33% duty cycles and 300 ns pulse lengths. The preamplifier delivers a peak output power of 19.6 dBm at 11% PAE and 12.6 dB associated gain at a bias of VCE=6 V and IC=128 mA. The power amplifier delivers a peak output power of 29 dBm at 15% PAE and 5 dB associated gain after minimal external tuning at a bias of VCE=6 V and IC=600 mA. The monolithic amplifiers reported here are based upon 35 GHz power HBTs and represent the first such amplifiers yet reported.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; power amplifiers; preamplifiers; pulse amplifiers; 11 percent; 12.6 dB; 128 mA; 15 percent; 300 ns; 35 GHz; 5 dB; 6 V; 600 mA; GaAs-AlGaAs; MIMIC; MM-wave IC; heterojunction bipolar transistors; monolithic amplifiers; pulsed HBT MMIC amplifiers; pulsed-power applications; three-stage MMIC preamplifier; two-stage power amplifier; Gain; Heterojunction bipolar transistors; MMICs; Power amplifiers; Power generation; Preamplifiers; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335431

Filename

335431