Title :
Electrical Properties of Lead Zirconate Titanate Thin Films by a Hydrothermal Method
Author :
Che, Lingjuan ; Cheng, Jinrong ; Yu, Shengwen ; Chen, Chao ; Meng, Zhongyan
Author_Institution :
Shanghai Univ., Shanghai
fDate :
July 30 2006-Aug. 3 2006
Abstract :
Polycrystalline lead zirconate titanate (PZT) thin films were synthesized on titanium substrates at a processing temperature of 160degC for 16 hours by using a hydrothermal method. The effects of KOH concentration on the phase evolution and morphology of the films were investigated. The as-synthesized PZT thin films using KOH concentration of 4 mol/1 have a dielectric constant and loss of 515 and 0.35 at 103 Hz respectively. The dielectric loss, tandelta and leakage current of hydrothermal PZT thin films were reduced by additional annealing at 100-400degC in air. Moreover, the annealed hydrothermal PZT thin films exhibit typical ferroelectric hysteresis loops at room temperature.
Keywords :
annealing; dielectric hysteresis; dielectric losses; ferroelectric thin films; lead compounds; leakage currents; permittivity; piezoelectric thin films; zirconium compounds; KOH concentration effects; PZT; PZT thin films; annealing; dielectric constant; dielectric loss; electrical properties; ferroelectric hysteresis loops; hydrothermal method; leakage current; temperature 100 C to 400 C; titanium substrates; Annealing; Dielectric constant; Dielectric losses; Dielectric substrates; Dielectric thin films; Leakage current; Morphology; Temperature; Titanium compounds; Transistors; Dielectric and Ferroelectric properties; Hydrothermal synthesis; PZT thin films;
Conference_Titel :
Applications of ferroelectrics, 2006. isaf '06. 15th ieee international symposium on the
Conference_Location :
Sunset Beach, NC
Print_ISBN :
978-1-4244-1331-7
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2006.4387889
