Title :
Structural and Electrical Properties of BiFeO3 Thin Films Prepared by the Pulsed Laser Deposition Method
Author :
Zhang, Guanjun ; Cheng, Jinrong ; Chen, Rui ; Yu, Shengwen ; Meng, Zhongyan
Author_Institution :
Shanghai Univ., Shanghai
fDate :
July 30 2006-Aug. 3 2006
Abstract :
La-doped BiFeO3 (BLFO) thin films have been deposited on Pt (Ill)/TiO2/SiO2/Si (100) substrates under different oxygen pressure of 5 mTorr -50 mTorr by the pulsed-laser deposition (PLD). The effects of oxygen pressure on crystal structure and ferroelectric properties have been investigated. X-ray diffraction analysis shows that the BLFO thin films are of pure perovskite phase with tetragonal structure. The dielectric constant of the films increases with increasing oxygen pressures. The film deposited at 10 mTorr is found to have a relatively high dielectric constant and a relatively small dielectric loss. It also shows a low value of leakage current 1.17 x10-7 A/cm2 at a field strength of 100 kV/cm and ferroelectric properties at room temperature.
Keywords :
X-ray diffraction; bismuth compounds; dielectric losses; ferroelectric thin films; lanthanum; leakage currents; permittivity; pulsed laser deposition; BiFeO3:La; X-ray diffraction analysis; dielectric constant; dielectric loss; ferroelectric properties; leakage current; oxygen pressure; perovskite phase; pulsed laser deposition method; structural-electrical properties; thin films; Dielectric constant; Dielectric losses; Dielectric substrates; Dielectric thin films; Ferroelectric films; Ferroelectric materials; High-K gate dielectrics; Semiconductor thin films; Sputtering; X-ray diffraction; La-doped BiFeO3 thin films; PLD; structural and dielectric properties;
Conference_Titel :
Applications of ferroelectrics, 2006. isaf '06. 15th ieee international symposium on the
Conference_Location :
Sunset Beach, NC
Print_ISBN :
978-1-4244-1331-7
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2006.4387890
