Title :
Design and performance of wideband, low-noise, millimeter-wave amplifiers for microwave anisotropy probe radiometers
Author :
Pospieszalski, M.W. ; Wollack, E.J. ; Bailey, N. ; Thacker, D. ; Webber, J. ; Nguyen, L.D. ; Le, M. ; Lui, M.
Author_Institution :
Nat. Radio Astron. Obs., Charlottesville, VA, USA
Abstract :
Differential pseudo-correlation radiometers covering 20-25 GHz, 28-37 GHz, 35-46 GHz 53-69 GHz and 82-106 GHz are used in the Microwave Anisotropy Probe (MAP) mission to be launched in late 2000. This paper describes the design, performance and manufacturing of 140 InP HFET amplifiers suitable for cryogenic cooling which exhibit low noise performance and complex gain match over the given radiometer bandwidths (typical noise temperature of 90 K, or 1.2 dB noise figure, for W-band amplifier at 80 K ambient).
Keywords :
III-V semiconductors; cryogenic electronics; field effect MIMIC; indium compounds; integrated circuit design; integrated circuit noise; millimetre wave amplifiers; radiometers; wideband amplifiers; 1.2 dB; 20 to 106 GHz; 80 K; EHF; InP; InP HFET amplifiers; Microwave Anisotropy Probe mission; W-band amplifier; complex gain match; cryogenic cooling; differential pseudo-correlation radiometers; low noise performance; low-noise millimeter-wave amplifiers; microwave anisotropy probe radiometers; wideband MM-wave LNA; Anisotropic magnetoresistance; HEMTs; Indium phosphide; Low-noise amplifiers; MODFETs; Noise figure; Probes; Pulp manufacturing; Radiometers; Wideband;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-6280-2
DOI :
10.1109/RFIC.2000.854452
