DocumentCode
2196185
Title
Design and characterization of MMIC active cold loads
Author
Buhles, P.M. ; Lardizabal, S.M.
Author_Institution
Dept. of Electr. Eng., Massachusetts Univ., Amherst, MA, USA
fYear
2000
fDate
10-13 June 2000
Firstpage
221
Lastpage
225
Abstract
This paper reports the first broadband monolithic microwave integrated circuit (MMIC) active cold loads. The fabricated loads demonstrate state-of-the-art temperatures of 90 K over the 2-10 GHz range and 125 K over the 10-26 GHz range. The MMICs were fabricated on 100 micron GaAs substrates using 0.15 micron GaAs metamorphic HEMT technology. In addition, contemporary topologies for cold load design have been evaluated.
Keywords
HEMT integrated circuits; calibration; circuit feedback; cryogenic electronics; field effect MMIC; gallium arsenide; integrated circuit design; measurement standards; microwave measurement; 0.15 micron; 100 micron; 125 K; 2 to 26 GHz; 90 K; GaAs; GaAs metamorphic HEMT technology; GaAs substrates; broadband MMIC active cold loads; characterization; cold load design; monolithic microwave integrated circuit; Calibration; Costs; Feedback; Gallium arsenide; HEMTs; Integrated circuit technology; MMICs; Microwave radiometry; Temperature distribution; mHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location
Boston, MA, USA
ISSN
1529-2517
Print_ISBN
0-7803-6280-2
Type
conf
DOI
10.1109/RFIC.2000.854453
Filename
854453
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