DocumentCode
2196261
Title
A comparison study of ESD protection for RFICs: performance vs. parasitics
Author
Haigang Feng ; Ke Gong ; Wang, A.Z.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
fYear
2000
fDate
10-13 June 2000
Firstpage
235
Lastpage
238
Abstract
This paper reports two advanced Electro-Static Discharge (ESD) protection structures suitable for RFICs and a comparison study of influences of ESD parasitic capacitance (C/sub ESD/) on high-speed circuits. For a 4 GHz ring-oscillator and a low-power high-speed op-amp circuits, it was observed that C/sub ESD/ may corrupt high-speed performance significantly and new ESD structures can recover the corruption by 80%.
Keywords
MMIC oscillators; UHF integrated circuits; capacitance; electrostatic discharge; field effect MMIC; high-speed integrated circuits; operational amplifiers; protection; ESD parasitic capacitance; ESD protection structures; RFIC parasitics; RFIC performance; electrostatic discharge protection; high-speed circuits; low-power high-speed op amp circuits; ring-oscillator; Circuits; Design methodology; Electrostatic discharge; High performance computing; Laboratories; MOS devices; Neodymium; Parasitic capacitance; Protection; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location
Boston, MA, USA
ISSN
1529-2517
Print_ISBN
0-7803-6280-2
Type
conf
DOI
10.1109/RFIC.2000.854456
Filename
854456
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