DocumentCode :
2196282
Title :
Fabrication of p-n junctions of Bi-Sb-Te thermoelectric materials
Author :
Kumpeerapun, T. ; Kosalathip, V. ; Scherrer, H. ; Dauscher, A. ; Onreabroy, W. ; Sripichai, I.
Author_Institution :
Phys. Dept., King Mongkut´´s Univ. of Technol. Thonburi, Bangkok
fYear :
2007
fDate :
3-7 June 2007
Firstpage :
42
Lastpage :
44
Abstract :
The aim of the investigation is to attempt to build-up a p-n junction by means of utilizing conventional thermoelectric materials, i.e. bulk polycrystalline p-type Bi0.45Sb1.55Te3 and n-type Bi1.6Sb0.4Te3. The fabrication used a rapid and ordinary sintering procedure. The current-voltage (I-V) characteristic curves are measured for several heating times and temperatures. The results show the feasibility of obtaining a diode-like behavior with a low leakage current at ambient temperature.
Keywords :
antimony compounds; bismuth compounds; leakage currents; p-n junctions; semiconductor diodes; semiconductor materials; sintering; thermoelectricity; Bi0.45Sb1.55Te3; Bi1.6Sb0.4Te3; I-V curves; current-voltage characteristics; heating; leakage current; n-type thermoelectric material; p-n diode; p-n junction; polycrystalline p-type thermoelectric material; rapid sintering; Bismuth; Current measurement; Diodes; Fabrication; Heating; Leakage current; P-n junctions; Tellurium; Temperature; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2007. ICT 2007. 26th International Conference on
Conference_Location :
Jeju Island
ISSN :
1094-2734
Print_ISBN :
978-1-4244-2262-3
Electronic_ISBN :
1094-2734
Type :
conf
DOI :
10.1109/ICT.2007.4569419
Filename :
4569419
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2196282
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