Fabrication of p-n junctions of Bi-Sb-Te thermoelectric materials

Author

Kumpeerapun, T. ; Kosalathip, V. ; Scherrer, H. ; Dauscher, A. ; Onreabroy, W. ; Sripichai, I.

Author_Institution

Phys. Dept., King Mongkut´´s Univ. of Technol. Thonburi, Bangkok

fYear

2007

fDate

3-7 June 2007

Firstpage

42

Lastpage

44

Abstract

The aim of the investigation is to attempt to build-up a p-n junction by means of utilizing conventional thermoelectric materials, i.e. bulk polycrystalline p-type Bi_0.45Sb_1.55Te₃ and n-type Bi_1.6Sb_0.4Te₃. The fabrication used a rapid and ordinary sintering procedure. The current-voltage (I-V) characteristic curves are measured for several heating times and temperatures. The results show the feasibility of obtaining a diode-like behavior with a low leakage current at ambient temperature.

Keywords

antimony compounds; bismuth compounds; leakage currents; p-n junctions; semiconductor diodes; semiconductor materials; sintering; thermoelectricity; Bi_0.45Sb_1.55Te₃; Bi_1.6Sb_0.4Te₃; I-V curves; current-voltage characteristics; heating; leakage current; n-type thermoelectric material; p-n diode; p-n junction; polycrystalline p-type thermoelectric material; rapid sintering; Bismuth; Current measurement; Diodes; Fabrication; Heating; Leakage current; P-n junctions; Tellurium; Temperature; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 2007. ICT 2007. 26th International Conference on

Conference_Location

Jeju Island

ISSN

1094-2734

Print_ISBN

978-1-4244-2262-3

Electronic_ISBN

1094-2734

Type

conf

DOI

10.1109/ICT.2007.4569419

Filename

4569419