A highly integrated dual-band tri-mode transceiver chipset for CDMA TIA/EIA-95 and AMPS applications

Author

Robinson, T. ; Agarwal, Basant ; Lloyd, S. ; Piriyapoksombut, P. ; Rampmeier, K. ; Reddy, M. ; Yates, D.

Author_Institution

Conexant Syst. Inc., Newport Beach, CA, USA

fYear

2000

fDate

10-13 June 2000

Firstpage

249

Lastpage

252

Abstract

In this paper, a two device chip-set integrating the RF transceiver front-end function for the dual-band, dual-mode CDMA/AMPS cellular telephone standard TIA/EIA-98 is described. Fabricated in a double-polysilicon, 25 GHz f/sub T/, silicon bipolar process, the transceiver achieves a total power dissipation of less than 480 mW at 3 V with 9 dBm transmitter power.

Keywords

UHF integrated circuits; cellular radio; code division multiple access; low-power electronics; telecommunication standards; telephone sets; transceivers; 1.9 GHz; 25 GHz; 3 V; 900 MHz; AMPS applications; CDMA TIA/EIA-95; bipolar process; cellular telephone standard; double-polysilicon process; dual-band tri-mode transceiver chipset; total power dissipation; transceiver front-end function; transmitter power; Dual band; Energy consumption; Filters; Linearity; Multiaccess communication; Noise figure; Personal communication networks; Radio frequency; Radiofrequency amplifiers; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE

Conference_Location

Boston, MA, USA

ISSN

1529-2517

Print_ISBN

0-7803-6280-2

Type

conf

DOI

10.1109/RFIC.2000.854459

Filename

854459