High temperature thermoelectric properties of IV–VI MBE films alloyed with tin

Author

Konig, J. ; Jacquot, A. ; Bottner, H.

Author_Institution

Fraunhofer-Inst. Phys. Meas. Tech. IPM, Freiburg

fYear

2007

fDate

3-7 June 2007

Firstpage

55

Lastpage

60

Abstract

We report on the temperature stability of the unusual conduction type of PbTe and PbSe epitaxial thin films alloyed with tin. Also the origin of the n-type conduction is investigated. In addition investigations have been done to determine the temperature dependent thermoelectric properties (electrical conductivity and thermopower) in the temperature range between 300 K and 600 K. The data derived from thin film material prove that beside the well known p-IV-VI-materials also n-type lead-tin-chalcogenides are suitable for thermoelectric application. To use this material in bulk devices it is necessary to able to transfer the properties to bulk samples. Thus the properties of similar bulk IV-VI lead-tin-chalcogenides were analyzed and compared to the thin film material.

Keywords

IV-VI semiconductors; electrical conductivity; lead compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; thermal stability; thermoelectric power; tin compounds; IV-VI MBE films; Pb_1-xSn_xSe; Pb_1-xSn_xTe; electrical conductivity; epitaxial thin films; high temperature thermoelectricity; n-type conduction; temperature 300 K to 600 K; temperature stability; thermopower; Annealing; Conducting materials; Lattices; Lead; Molecular beam epitaxial growth; Semiconductor materials; Temperature; Thermal conductivity; Thermoelectricity; Tin alloys;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 2007. ICT 2007. 26th International Conference on

Conference_Location

Jeju Island

ISSN

1094-2734

Print_ISBN

978-1-4244-2262-3

Electronic_ISBN

1094-2734

Type

conf

DOI

10.1109/ICT.2007.4569422

Filename

4569422