Title :
A RF transceiver for WDCT in a 25 GHz Si bipolar technology
Author :
Li Puma, G. ; Geppert, W. ; Hadjizada, K. ; Van Waasen, S. ; Mevissen, W. ; Von Schwartzenberg, W. ; Heinen, S.
Author_Institution :
Design Center, Infineon Technol., Duesseldorf, Germany
Abstract :
An RF Si bipolar transceiver IC for WDCT is presented. The complete transceiver operates from 3.1 V to 5.1 V and provides very high integration level. The receiver uses a single conversion architecture with an image-reject frontend and needs no external trimming.
Keywords :
UHF integrated circuits; bipolar MMIC; consumer electronics; cordless telephone systems; digital radio; telephone sets; transceivers; 25 GHz; 3.1 to 5.1 V; RF transceiver; WDCT; bipolar technology; consumer market; image-reject frontend; integration level; single conversion architecture; transceiver; worldwide digital cordless telecommunication; Costs; Frequency shift keying; Power amplifiers; Radio frequency; Radiofrequency integrated circuits; Regulators; Synthesizers; Time division multiple access; Transceivers; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-6280-2
DOI :
10.1109/RFIC.2000.854461
