DocumentCode :
2196523
Title :
Functionally Graded Bi2Te3 based material for above ambient temperature application
Author :
Ben-Yehuda, O. ; Gelbstein, Y. ; Dashevsky, Z. ; George, Y. ; Dariel, M.P.
Author_Institution :
Dept. of Phys., Ben-Gurion Univ., Beer-Sheva
fYear :
2007
fDate :
3-7 June 2007
Firstpage :
82
Lastpage :
85
Abstract :
This study is concerned with the preparation of Bi0.4Sb1.6Te3 functionally graded (FG) samples by a powder metallurgical approach for above ambient temperature applications. The FG sample is based on two components with different carrier concentration. The first is designed for a maximal figure of merit at room temperature, the second, doped with Pb, is meant for operation at higher temperatures. The transport properties of the two components of the FG sample, namely the Seebeck coefficient and electrical resistivity, have been determined from room temperature up to 550 K. The preparation of FG samples, their chemical stability and their transport properties over this temperatures range were examined and will be discussed.
Keywords :
Seebeck effect; antimony compounds; bismuth compounds; carrier density; crystal growth from melt; electrical resistivity; functionally graded materials; lead; powder metallurgy; semiconductor growth; semiconductor materials; Bi0.4Sb1.6Te3; Bi0.4Sb1.6Te3:Pb; Seebeck coefficient; carrier concentration; chemical stability; electrical resistivity; figure of merit; functionally graded material; p-type semiconductor; powder metallurgy; temperature 293 K to 550 K; transport property; Bismuth; Chemicals; Electric resistance; Electric variables measurement; Powders; Pressing; Stability; Temperature distribution; Thermoelectricity; X-ray scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2007. ICT 2007. 26th International Conference on
Conference_Location :
Jeju Island
ISSN :
1094-2734
Print_ISBN :
978-1-4244-2262-3
Electronic_ISBN :
1094-2734
Type :
conf
DOI :
10.1109/ICT.2007.4569429
Filename :
4569429
Link To Document :
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