C-band high performance IMFETs and SuperIMFETs using MESFET and PHEMT technology for SATCOM applications

Author

Shu, J. ; Wei, Jason ; Basset, R. ; Yun Chung ; Chang Hua ; Meng, C. ; Chye, P. ; Hall, J. ; Ding Day

Author_Institution

Avantek Inc., Santa Clara, CA, USA

fYear

1994

fDate

23-27 May 1994

Firstpage

561

Abstract

Two power component design approaches: IMFET and SuperIMFET for the C-Band commercial SATCOM down link SSPA have been successfully developed. The functions and the performance of these two product types are compared. For the IMFET approach, when PHEMT devices are used instead of MESFETs, higher PAE (Power-Added Efficiency), power density, and gain are obtained which makes PHEMT ideal technology for the SATCOM business. An IMFET delivering 11 W output power, 13 dB gain, and 60% PAE across the entire 500 MHz bandwidth of 3.7 to 4.2 GHz is shown. This PAE performance is believed to be the highest for GaAs FETs at this power level and this covered bandwidth.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; high electron mobility transistors; microwave amplifiers; power amplifiers; power transistors; solid-state microwave devices; 11 W; 13 dB; 3.7 to 4.2 GHz; 500 MHz; 60 percent; C-band; GaAs; IMFETs; MESFET technology; PHEMT technology; SATCOM applications; SSPA; SuperIMFETs; gain; internally matched FET; power component design; power density; power-added efficiency; Bandwidth; Business; FETs; Gain; Gallium arsenide; MESFETs; PHEMTs; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335483

Filename

335483