Title :
Novel HEMT structures for mixer applications
Author :
Allam, R. ; Kolanowski, C. ; Théron, D. ; Crosnier, Y.
Author_Institution :
Inst. d´´Electron. et de Microelectron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
Abstract :
We present two new and original HEMT structures. They have been designed and realized for gate mixer applications. The first HEMT has a decoupling capacitor between the drain and the source. The integrated capacitor acts as a low-pass filter. The second HEMT presents a very nonlinear transconductance profile. The IF signal is provided by the mixing of the RF signal and the second harmonic of the LO signal. Thus, the required LO frequency is divided by 2
Keywords :
HEMT integrated circuits; capacitors; electric admittance; field effect MIMIC; integrated circuit measurement; low-pass filters; millimetre wave mixers; nonlinear network synthesis; HEMT structures; IF signal; LO frequency; LO signal; RF signal; decoupling capacitor; drain; gate mixer applications; integrated capacitor; low-pass filter; millimeter wave HEMT mixers; mixer applications; nonlinear transconductance profile; second harmonic; source; Capacitors; Dielectric substrates; Frequency conversion; Gallium arsenide; HEMTs; Laboratories; Local oscillators; Millimeter wave transistors; RF signals; Transconductance;
Conference_Titel :
Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-2674-1
DOI :
10.1109/SBMOMO.1995.509622
