DocumentCode
2196633
Title
A compact high power amplifier for handy phones
Author
Camargo, E. ; Steinberg, R.M.
Author_Institution
Fujitsu Compound Semicond. Inc., San Jose, CA, USA
fYear
1994
fDate
23-27 May 1994
Firstpage
565
Abstract
A compact high power amplifier module has been developed for operation within the 890 to 915 MHz band and intended for application on handy phones. The paper summarizes the design steps and the unique use of self resonating chip capacitors to increase the efficiency. The amplifier module delivers a saturated power of +36 dBm with 55% efficiency and 36 dB gain when operating from a supply voltage of 5.8 volts.<>
Keywords
cordless telephone systems; mobile radio systems; power amplifiers; solid-state microwave circuits; ultra-high-frequency amplifiers; 36 dB; 5.8 V; 55 percent; 890 to 915 MHz; UHF; amplifier module; efficiency; handy phones; high power amplifier; saturated power; self resonating chip capacitors; supply voltage; Capacitors; Gain; High power amplifiers; Power amplifiers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location
San Diego, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1778-5
Type
conf
DOI
10.1109/MWSYM.1994.335484
Filename
335484
Link To Document