Title :
A GaAs MCM power amplifier of 3.6 V operation with high efficiency of 49% for 0.9 GHz digital cellular phone systems
Author :
Tateoka, K. ; Sugimura, A. ; Furukawa, H. ; Yuri, M. ; Yoshikawa, N. ; Kanazawa, K.
Author_Institution :
Electron. Res. Lab., Matsushita Electron. Corp., Osaka, Japan
Abstract :
Extremely small GaAs PA has been implemented using the AlN multilayer MCM for 0.9 GHz digital cellular phones. The present PA exhibited the efficiency of 49% with drain supply voltage as low as 3.6 V. The PA was designed to provide the matching circuits with the maximum gain at the input and the minimum intermodulation distortion at the output.<>
Keywords :
III-V semiconductors; cellular radio; digital radio systems; gallium arsenide; intermodulation; multichip modules; power amplifiers; solid-state microwave circuits; ultra-high-frequency amplifiers; 0.9 GHz; 3.6 V; 49 percent; AlN multilayer MCM; GaAs; digital cellular phone systems; drain supply voltage; efficiency; intermodulation distortion; matching circuits; power FET; power amplifier; Cellular phones; Circuits; Gallium arsenide; High power amplifiers; Intermodulation distortion; Low voltage; Nonhomogeneous media; Operational amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335485
