• DocumentCode
    2196697
  • Title

    The use of automatic differentiation in advanced non-linear modelling of microwave active devices

  • Author

    Feldmann, Peter ; Cojocaru, Vicentiu I. ; Brazil, Thomas J.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    1
  • fYear
    1995
  • fDate
    24-27 Jul 1995
  • Firstpage
    221
  • Abstract
    We describe the use of a novel, flexible and highly modular simulation environment called Sframe, in microwave device modelling and circuit simulation. The software architecture of Sframe is based on object orientation, automatic differentiation and the use of off-the-shelf numerical codes. We present the first tests with the implementation of an advanced nonlinear GaAs FET model in Sframe. This general purpose model, introduces novel solutions, particularly with respect to the modelling of the gate charge, gate capacitances and the RF dispersion of the transconductance and output conductance. The use of automatic differentiation techniques and the modularity of Sframe, lead to very compact model codes, simplifies the implementation process and eliminates many common sources of error. DC and small-signal AC simulation tests have been successfully carried out and the results are shown for the case of a 0.5 μm GaAs MESFET
  • Keywords
    Schottky gate field effect transistors; circuit analysis computing; differentiation; electric admittance; equivalent circuits; microwave field effect transistors; object-oriented programming; programming environments; semiconductor device models; 0.5 micron; DC simulation tests; GaAs; III-V semiconductors; MESFET; RF dispersion; Sframe; automatic differentiation; gate capacitances; gate charge; general purpose model; microwave active devices; microwave circuit simulation; microwave device modelling; modular simulation environment; nonlinear GaAs FET model; nonlinear modelling; object orientation; off-the-shelf numerical codes; output conductance; small-signal AC simulation tests; software architecture; transconductance; Capacitance; Circuit simulation; Circuit testing; Gallium arsenide; MESFETs; Microwave FETs; Microwave devices; Radio frequency; Software architecture; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International
  • Conference_Location
    Rio de Janeiro
  • Print_ISBN
    0-7803-2674-1
  • Type

    conf

  • DOI
    10.1109/SBMOMO.1995.509624
  • Filename
    509624