DocumentCode
2196697
Title
The use of automatic differentiation in advanced non-linear modelling of microwave active devices
Author
Feldmann, Peter ; Cojocaru, Vicentiu I. ; Brazil, Thomas J.
Author_Institution
AT&T Bell Labs., Murray Hill, NJ, USA
Volume
1
fYear
1995
fDate
24-27 Jul 1995
Firstpage
221
Abstract
We describe the use of a novel, flexible and highly modular simulation environment called Sframe, in microwave device modelling and circuit simulation. The software architecture of Sframe is based on object orientation, automatic differentiation and the use of off-the-shelf numerical codes. We present the first tests with the implementation of an advanced nonlinear GaAs FET model in Sframe. This general purpose model, introduces novel solutions, particularly with respect to the modelling of the gate charge, gate capacitances and the RF dispersion of the transconductance and output conductance. The use of automatic differentiation techniques and the modularity of Sframe, lead to very compact model codes, simplifies the implementation process and eliminates many common sources of error. DC and small-signal AC simulation tests have been successfully carried out and the results are shown for the case of a 0.5 μm GaAs MESFET
Keywords
Schottky gate field effect transistors; circuit analysis computing; differentiation; electric admittance; equivalent circuits; microwave field effect transistors; object-oriented programming; programming environments; semiconductor device models; 0.5 micron; DC simulation tests; GaAs; III-V semiconductors; MESFET; RF dispersion; Sframe; automatic differentiation; gate capacitances; gate charge; general purpose model; microwave active devices; microwave circuit simulation; microwave device modelling; modular simulation environment; nonlinear GaAs FET model; nonlinear modelling; object orientation; off-the-shelf numerical codes; output conductance; small-signal AC simulation tests; software architecture; transconductance; Capacitance; Circuit simulation; Circuit testing; Gallium arsenide; MESFETs; Microwave FETs; Microwave devices; Radio frequency; Software architecture; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International
Conference_Location
Rio de Janeiro
Print_ISBN
0-7803-2674-1
Type
conf
DOI
10.1109/SBMOMO.1995.509624
Filename
509624
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