Title :
Thermoelectric properties in the misfit-layered-cobalt oxides [Bi2A2O4][CoO2]b1/b2 (A=Ca, Sr, Ba, b1/b2=1.65, 1.82, 1.98) single crystals
Author :
Kobayashi, W. ; Hébert, S. ; Muguerra, H. ; Grebille, D. ; Pelloquin, D. ; Maignan, A.
Author_Institution :
Lab. CRISMAT, Univ. de Caen, Caen
Abstract :
Single crystals of different phases of misfit cobalt oxides have been synthesized. Using these materials, the intrinsic power factor has been determined. By combining thermopower S and Hall coefficient measurements, we will show how S can be tuned by doping in this family of materials, the doping being strongly dependent on the misfit ratio p=b1/b2 ([Bi2A2O4][CoO2]b1/b2 with A=Ca, Sr, Ba, b1/b2=1.65, 1.82, 1.98). The in-plane resistivity also strongly depends on the doping : the more metallic samples are obtained for the largest carrier concentration, i.e. the smaller S value. The combination of these two factors leads to an important conclusion that the power factor is independent of the doping in these Bi-based materials converging to a unique value of 2.2plusmn0.3 muW/cmK2 at room temperature, which is not so trivial. We will discuss the origin of the almost unique value of 2.2plusmn0.3 muW/cmK2.
Keywords :
Hall effect; barium compounds; bismuth compounds; calcium compounds; carrier density; cobalt compounds; crystal structure; doping; electrical resistivity; strontium compounds; thermoelectric power; Bi2Ba2O4-CoO2; Bi2Ca2O4-CoO2; Bi2Sr2O4-CoO2; Hall coefficient measurements; carrier concentration; doping; intrinsic power factor; misfit-layered-cobalt oxides; temperature 293 K to 298 K; thermoelectric properties; thermopower; Bismuth; Cobalt; Conductivity; Crystalline materials; Crystals; Doping; Reactive power; Strontium; Temperature; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2007. ICT 2007. 26th International Conference on
Conference_Location :
Jeju Island
Print_ISBN :
978-1-4244-2262-3
Electronic_ISBN :
1094-2734
DOI :
10.1109/ICT.2007.4569437