Title :
A high power Q-band GaAs pseudomorphic HEMT monolithic amplifier
Author :
Boulais, W. ; Donahue, R.S. ; Platzker, A. ; Huang, J. ; Aucoin, L. ; Shanfield, S. ; Vafiades, M.
Author_Institution :
Equipment Div., Raytheon Co., Wayland, MA, USA
Abstract :
A first-pass, three stage monolithic GaAs pseudomorphic HEMT power amplifier has been developed for use over the 40 GHz to 45 GHz band. The MMIC amplifier delivers 500 to 725 mW at the one dB gain compression point. The associated power gain is 10 to 11 dB and the power added efficiency is 10 to 17%. Potential applications for this work include communication systems and phased array radars.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; high electron mobility transistors; microwave amplifiers; power amplifiers; 10 to 11 dB; 10 to 17 percent; 40 to 45 GHz; 500 to 725 mW; GaAs; HEMT monolithic amplifier; MIMIC; MM-wave IC; MMIC amplifier; Q-band; high power operation; power amplifier; pseudomorphic HEMT; three stage type; Gain; Gallium arsenide; High power amplifiers; MMICs; PHEMTs; Phased arrays; Power amplifiers; Radar applications;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335507
