A 6.5 kV IGBT module with very high safe operating area

Author

Kopta, A. ; Rahimo, M. ; Schlabach, U. ; Schneider, D. ; Carroll, Eric ; Linder, S.

Author_Institution

ABB Switzerland Ltd, Switzerland

Volume

2

fYear

2005

fDate

2-6 Oct. 2005

Firstpage

794

Abstract

A new 6.5 kV IGBT module is presented. This module, using high voltage soft-punch-through technology exhibits an exceptionally high reverse bias safe operating area and withstands dynamic avalanche up to its rated voltage. This capability allows the module to be operated with a gate resistance 10 times lower than present generations of 6.5 kV modules of the same nominal rating, allowing fast turn-off and hence reduced turn-off losses. The chip technology is briefly described and detailed test results highlighting the smooth switching characteristics, extremely safe operating areas and high tolerance to stray inductance is presented. The importance of fast switching through low values of gate resistance is explained in terms of loss-reduction, gate-drive simplification and good dynamic current sharing between chips within the module.

Keywords

avalanche breakdown; insulated gate bipolar transistors; switching; 6.5 kV; IGBT module; chip technology; gate resistance; gate-drive simplification; high voltage soft-punch-through technology; loss-reduction; reverse bias safe operating area; stray inductance tolerance; Clamps; Insulated gate bipolar transistors; Power electronics; Semiconductor diodes; Semiconductor optical amplifiers; Snubbers; Temperature; Testing; Thermal resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2005. Fourtieth IAS Annual Meeting. Conference Record of the 2005

ISSN

0197-2618

Print_ISBN

0-7803-9208-6

Type

conf

DOI

10.1109/IAS.2005.1518423

Filename

1518423